High Energy XPS


Bulk Sensitive:

  • Beam Energy: 1.7 - 9.0 keV
  • Analyzer: Photoelectron kinetic energy 5 eV - 10 keV

 By changing the beam energy from 1.7 to 9.0 keV, users are able to profile thin films from surface to 10 nm deep.

  • RHEED system for minotiring the growth of thin films
  • Ion gun for cleaning the surfaces of substrate and sample
  • 4-pocket mini electron beam evaporator for metal deposition