High Energy XPS
- Beam Energy: 1.7 - 9.0 keV
- Analyzer: Photoelectron kinetic energy 5 eV - 10 keV
By changing the beam energy from 1.7 to 9.0 keV, users are able to profile thin films from surface to 10 nm deep.
- RHEED system for minotiring the growth of thin films
- Ion gun for cleaning the surfaces of substrate and sample
- 4-pocket mini electron beam evaporator for metal deposition